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(600 volts peak) the moc3162 and moc3163 devices consist of gallium arsenide infrared emitting diodes optically coupled to monolithic silicon detectors performing the functions of zero voltage crossing bilateral triac drivers. they are designed for use with a triac in the interface of logic systems to equipment powered from 115/240 vac lines, such as solidstate relays, industrial controls, motors, solenoids and consumer appliances, etc. ? simplifies logic control of 115/240 vac power ? zero voltage turnon ? dv/dt of 1000 v/ m s guaranteed minimum @ 600 v peak ? i ft insensitive to static dv/dt (within rated v drm ) ? t o order devices that are tested and marked per vde 0884 requirements, the s u f fix ovo must be included at end of part number . vde 0884 is a test option. recommended for 115/240 vac(rms) applications: ? solenoid/valve controls ? temperature controls ? lighting controls ? e.m. contactors ? static power switches ? ac motor starters ? ac motor drives ? solid state relays ? static ac power switch maximum ratings (t a = 25 c unless otherwise noted) rating symbol value unit infrared emitting diode reverse voltage v r 6.0 volts forward current e continuous i f 60 ma total power dissipation @ t a = 25 c negligible power in output driver derate above 25 c p d 120 1.60 mw mw/ c output driver offstate output terminal voltage v drm 600 volts peak repetitive surge current (pw = 100 m s, 120 pps) i tsm 1.0 a total power dissipation @ t a = 25 c derate above 25 c p d 150 2.0 mw mw/ c total device isolation surge voltage (1) (peak ac voltage, 60 hz, 1 second duration) v iso 7500 vac(pk) total power dissipation @ t a = 25 c derate above 25 c p d 250 3.3 mw mw/ c junction temperature range t j 40 to +100 c ambient operating t emperature range t a 40 to +85 c storage t emperature range t stg 40 to +150 c soldering temperature (10 s) t l 260 c 1. isolation surge voltage, v iso , is an internal device dielectric breakdown rating. 1. for this test, pins 1 and 2 are common, and pins 4, 5 and 6 are common.
2 motorola optoelectronics device data electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit input led reverse leakage current (v r = 6.0 v) i r e 0.05 100 m a forward voltage (i f = 30 ma) v f e 1.15 1.5 volts output detector (i f = 0) leakage with led off, either direction (rated v drm , note 1) i drm e 10 100 na critical rate of rise of offstate voltage (note 3) @ 600 v peak dv/dt 1000 e e v/ m s coupled led trigger current, current required to latch output (main terminal voltage = 3.0 v, note 2) moc3162 moc3163 i ft e e e e 10 5.0 ma peak onstate voltage, either direction (i tm = 100 ma peak, i f = rated i ft ) v tm e 1.7 3.0 volts holding current, either direction i h e 200 e m a inhibit voltage (mt1mt2 voltage above which device will not trigger) (i f = rated i ft ) v inh e 8.0 15 volts leakage in inhibited state (i f = 10 ma maximum, at rated v drm , off state) i drm2 e 250 500 m a 1. test voltage must be applied within dv/dt rating. 2. all devices are guaranteed to trigger at an i f value less than or equal to max i ft . therefore, recommended operating i f lies between max 2. i ft (10 ma for moc3162, 5.0 ma for moc3163) and absolute max i f (60 ma). 3. this is static dv/dt. see figure 9 for test circuit. commutating dv/dt is a function of the loaddriving thyristor(s) only. 1000 800 600 400 200 0 200 400 600 800 1000 6 4 2 0 2 4 6 figure 1. onstate characteristics v tm , onstate voltage (volts) i tm , onstate current (ma) 1.5 1.3 1.1 0.9 0.7 0.5 4 0 25 0 25 5 0 7 5 figure 2. inhibit voltage versus temperature t a , ambient temperature ( c) v inh , volts normalized normalized to t a = 25 c 100 typical electrical characteristics t a = 25 c mo c 3 1 62 , m oc3163
figure 3. leakage with led off versus temperature i h , holding current ( a) normalized) 3.0 2.0 1.5 1.0 0.5 0 m 2.5 4 0 25 0 2 5 5 0 7 5 100 figure 4. i drm2 , leakage in inhibit state versus temperature i f , led forward current (ma) 1000100101.0 v , f forward voltage (volts) 2.0 1.8 1.6 1.4 1.2 1.0 pulse or dc pulse only figure 5. trigger current versus temperature 1.6 0.2 i ft , (ma) normalized 1.4 1.2 1.0 0.8 0.6 0.4 0.0 4 0 25 0 25 5 0 7 5 100 figure 6. led forward voltage versus forward current 1.6 0.0 0.8 i drm2 , ( a) normalized m 1.4 1.2 1.0 0.6 0.4 0.2 4 0 25 0 25 5 0 7 5 100 figure 7. holding current, i h versus temperature t a , ambient temperature ( c) 1000 10 1 i drm1 , peak blocking current (na) 4 0 25 0 25 5 0 7 5 100 100 i ft versus temperature (normalized) this graph shows the increase of the trigger current when the device is expected to operate at an ambient temperature below 25 c. multiply the normalized i ft shown on this graph with the data sheet guaranteed i ft . example: t a = 4 0 c, i ft = 10 ma i ft @ 40 c = 10 ma x 1.4 = 14 ma typical electrical characteristics t a = 25 c t a = 40 c 25 c 85 c v drm = 600 v v drm = 600 v i f = 10 ma normalized to t a = 25 c normalized to t a = 25 c normalized to t a = 25 c t a , ambient temperature ( c) t a , ambient temperature ( c) t a , ambient temperature ( c) mo c 3 1 62 , m oc3163
typical electrical characteristics t a = 25 c figure 8. led trigger current, i ft , versus dv/dt commutating dv/dt (v/ m s) 0.001 1.8 1.6 1.4 1.2 1.0 0.6 0.01 0.1 1.0 10 1000 i ft , led trigger current (normalized) 0.8 100 moc3163 moc3162 i ft versus dv/dt triac drivers with good noise immunity (dv/dt stat.) have in- ternal noise rejection circuits which prevent false triggering of the device in the event of fast raising line voltage transients. inductive loads generate a commutating dv/dt that may acti- vate the triac driver's noise suppression circuits. this pre- vents the device from turning on at its specified trigger current. it will in this case go into the mode of ahalfwavingo of the load. halfwaving of the load may destroy the power triac and the load. figure 8 shows the dependency of the triac drivers i ft ver- sus the reapplied voltage rise with a v p of 600 v. this dv/dt condition simulates a worst case commutating dv/dt ampli- tude. it can be seen that the required trigger current i ft changes with increased dv/dt. practical loads generate a commutating dv/dt of less than 50 v/ m s. the rate of rise of the commutat- ing dv/dt is effectively slowed by the use of snubber networks across the main triac. this snubber is also needed to keep the commutating dv/dt generated by inductive loads within the commutating dv/dt ratings of the power triac. 1. the mercury wetted relay provides a high speed repeated pulse to the d.u.t. 2. 100x scope probes are used, to allow high speeds and voltages. 3. the worstcase condition for static dv/dt is established by triggering the d.u.t. with a normal led input current, then removing the current. the variable r test allows the dv/dt to be gradually increased until the d.u.t. continues to trigger in response to the applied voltage pulse, even after the led current has been removed. the dv/dt is then decreased until the d.u.t. stops triggering. t rc is measured at this point and recorded. figure 9. static dv/dt test circuit + 600 vdc pulse input r te s t c te s t r = 1 k w mercury wetted relay d.u.t. x100 scope probe applied voltage waveform v max = 600 v dv/dt = 0.63 v max t rc 378 v t rc = t rc 378 v 0 volts mo c 3 1 62 , m oc3163
typical electrical characteristics t a = 25 c figure 10. led current required to trigger versus led pulse width pw in , led trigger pulse width ( m s) 1 25 20 15 10 5 0 2 5 10 20 50 100 normalized to pw in 100 m s i ft , normalized led trigger current led trigger current versus pw (normalized) for resistive loads the triac drivers may be controlled by short pulse into the input led. this input pulse must be syn- chronized with the ac line voltage zerocrossing points. led trigger pulse currents shorter than 100 m s must have an in- creased amplitude as shown on figure 10. this graph shows the dependency of the trigger current i ft versus the pulse width t(pw). i ft in the graph, i ft versus (pw), is normalized in respect to the minimum specified i ft for static condition, which is specified in the device characteristic. the normal- ized i ft has to be multiplied with the device's guaranteed static trigger current. example: guaranteed i ft = 10 ma, trigger pulse width pw = 3.0 m s i ft (pulsed) = 10 ma x 5.0 = 50 ma mo c 3 1 62 , m oc3163
applications guide basic applications basic triac driver circuit zerocross triac drivers are very immune to static dv/dt. this allows snubberless operations in all applications where the external generated noise amplitude and rate of rise in the ac line is not exceeding the devices' guaranteed limits. for these applications a snubber circuit is not necessary when a noise insensitive power triac is used. figure 11 shows the cir- cuit diagram. the triac driver is directly connected to the triac main terminal 2 and a series resistor r which limits the cur- rent to the triac driver. current limiting resistor r could be very small for normal operation since the triac driver can be only switched on within the zerocross window. worst case consideration, however, considers accidental turn on at the peak of the line voltage due to a line transient exceeding the devices' maximum ratings. for this reason r should be cal- culated to limit the current to i drm max at the peak of the line voltage. r = v p ac/i tm max rep. = v p ac/1a the power dissipation of this current limiting resistor and the triac driver is very small because the power triac carries the load current as soon as the current through driver and current limiting resistor reaches the trigger current of the power triac. the switching transition time for the driver is only one micro second and for power triacs typical four micro se- conds. triac driver circuit for noisy environments when the transient rate of rise and amplitude are expected to exceed the power triacs and triac drivers maximum ratings a snubber circuit as shown in figure 12 is recommended. fast transients are slowed by the rc snubber and exces- sive amplitudes are clipped by the metal oxide varistor mov. triac driver circuit for extremely noisy environments noisy environments for this circuit are defined in the noise standards ieee472, iec2554 and iec8014. industrial control applications, for example, do specify a maximum expected transient noise dv/dt and peak voltage which is superimposed onto the ac line voltage. figure 13 shows a split snubber network which enhances the circuits noise immunity by protecting the triac driver with optimized efficiency. figure 11. basic driver circuit figure 12. triac driver circuit for noisy environments figure 13. triac driver circuit for extremely noisy environments v cc return r led triac driver power triac ac line load r q control r r led v cc r s c s mov load r triac driver power triac r s c s mov load v cc r led r led = (v cc v f led v sat q)/i ft r = v p ac line/i tsm the load may be placed on either side of the ac line. traditional snubber configuration typical snubber values r s = 33 w , c s = 0.01 m f mov (metal oxide varistor) protects triac and driver from transient overvoltages >v drm max recommended snubber values r s = 10 w, c s = 0.033 mf q q triac driver power triac ac line return control control return ac line mo c 3 1 62 , m oc3163
7 motorola optoelectronics device data applications guide hotline switching application circuit typical circuit for use when hotline switching is required. in this circuit the ahoto side of the line is switched and the load connected to the cold or neutral side. the load may be con- nected to either the neutral or hotline. r in is calculated so that i f is equal to the rated i ft of the part, 10 ma for the moc3162, and 5.0 ma for the moc3163. the 39 ohm resistor and 0.01 m f capacitor are for snubbing of the triac and may or may not be necessary depending upon the particular triac and load used. inverse parallel scr driver circuit two inverse parallel scr's are controlled by one triac driv- er with a minimum component count as shown in figure 15. a snubber network and a mov across the main terminals of the scr's protects the semiconductors from transients on the ac line. figure 14. hotline switching application circuit figure 15. inverse parallel scr driver circuit moc3162/ moc3163 360 w r in v cc 39 hot r triac driver r s c s mov load ac line v cc return control r led load 240 vac neutral 1 2 3 6 5 4 q scr scr 0.01 mo c 3 1 62 , m oc3163
package dimensions t hru h ol e notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension l to center of lead when formed parallel. style 6: pin 1. anode 2. cathode 3. nc 4. main terminal 5. substrate 6. main terminal 64 13 a b seating plane t 4 pl f k c n g 6 pl d 6 pl e m a m 0.13 (0.005) b m t l m 6 pl j m b m 0.13 (0.005) a m t dim min max min max millimetersinches a 0.320 0.350 8.13 8.89 b 0.240 0.260 6.10 6.60 c 0.115 0.200 2.93 5.08 d 0.016 0.020 0.41 0.50 e 0.040 0.070 1.02 1.77 f 0.010 0.014 0.25 0.36 g 0.100 bsc 2.54 bsc j 0.008 0.012 0.21 0.30 k 0.100 0.150 2.54 3.81 l 0.300 bsc 7.62 bsc m 0 15 0 15 n 0.015 0.100 0.38 2.54 s ur fa ce mo u nt a b seating plane t j k l 6 pl m b m 0.13 (0.005) a m t c d 6 pl m a m 0.13 (0.005) b m t h g e 6 pl f 4 pl 31 46 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. dim min max min max millimetersinches a 0.320 0.350 8.13 8.89 b 0.240 0.260 6.10 6.60 c 0.115 0.200 2.93 5.08 d 0.016 0.020 0.41 0.50 e 0.040 0.070 1.02 1.77 f 0.010 0.014 0.25 0.36 g 0.100 bsc 2.54 bsc h 0.020 0.025 0.51 0.63 j 0.008 0.012 0.20 0.30 k 0.006 0.035 0.16 0.88 l 0.320 bsc 8.13 bsc s 0.332 0.390 8.43 9.90 mo c 3 1 62 , m oc3163
notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension l to center of lead when formed parallel. 0. 4 " l ea d s pa ci n g 64 13 a b n c k g f 4 pl seating d 6 pl e 6 pl plane t m a m 0.13 (0.005) b m t l j dim min max min max millimetersinches a 0.320 0.350 8.13 8.89 b 0.240 0.260 6.10 6.60 c 0.115 0.200 2.93 5.08 d 0.016 0.020 0.41 0.50 e 0.040 0.070 1.02 1.77 f 0.010 0.014 0.25 0.36 g 0.100 bsc 2.54 bsc j 0.008 0.012 0.21 0.30 k 0.100 0.150 2.54 3.81 l 0.400 0.425 10.16 10.80 n 0.015 0.040 0.38 1.02 mo c 3 1 62 , m oc3163
life support policy fairchilds products are not authorized for use as critical components in life support devices or systems without the express written approval of the president of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. www.fairchildsemi.com ? 2000 fairchild semiconductor corporation

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